No. of Printed Pages: 3 I· BIELE-002 1
B.Tech. -VIEP -ELECTRONICS AND
COMMUNICATION ENGINEERING (BTECVI)

Term-End Examination 00..576
June, 2016
BIELE-002 MICROELECTRONICS TECHNOLOGY
Time: 3 hours Maximum Marks: 70
Note: Attempt any seven questions. All questions carry equal marks. Assume suitable missing data, if any. Use of scientific calculator is permitted.

1. Explain the Czochralski Crystal Growing theory. What are the subsystems used in this crystal growth mechanism? 10

2. What is silicon shaping?

How do you evaluate the characteristics of single crystal silicon? Explain. 5+5

3. Explain the basic transport processes and reaction kinetics of vapour phase epitaxy. Draw and discuss the three common reactors used for epitaxial growth process. 10

4. Discuss the oxidation process using silicon oxidation model.

Explain the properties of oxide layer grown by dry oxidation and wet oxidation methods. 5+5

5. Explain the lithography process by taking a suitable example.

Differentiate between optical lithography and electron beam lithography processes. 5+5

6. Describe the plasma properties used in Reactive Plasma Etching. How is plasma created?

What is the difference between isotropic and anisotropic etching Explain with a suitable diagram. 5+5

7. Discuss the various schemes of deposition process of dielectric and polysilicon. Explain with a suitable diagram.

Differentiate between the properties of SiO2, Si3N4 and polysilicon. 5+5

8. Discuss the diffusion process in solids using a neat diagram.

Derive Fick's laws of diffusion equations.

Find the relation between concentration dependent diffusivities and temperature dependence of the diffusivities.

9. Describe the ion-implantation method by drawing its schematic diagram and explain ion stopping, dose, channelling and range distribution.

10. Write short notes on any two of the following: 2x5=10

Physical Vapour Deposition

Chemical Vapour Deposition

Multi Level Metallization