M.Sc. DEGREE EXAMINATION, APRIL 2016
Fourth Semester
Nanoscience and Technology
INFORMATION STORAGE MATERIALS AND DEVICES
(CBCS 2013 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 2 20)
Answer all questions.
1. State Moore's law.
2. Differentiate between volatile and non-volatile memory.
3. What is diffraction limit?
4. Expand RAM and ROM.
5. Define magnetic domain.
6. What is demagnetization field?
7. Define magnetoresistance.
8. What is superparamagnetic limit?
9. What is flash memory?
10. How can we rewrite the data on storage devices?
Sub. Code
533504
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Part B 5 25)
Answer all questions.
11. Explain about solid state memory in briefly.
Or
Write briefly on role of nanotechnology in data
storage.
12. Give a brief note on read and writing heads.
Or
Explain briefly on phase change recording.
13. Explain hysteresis loop in hard and soft magnets in
briefly.
Or
Explain concept of superparamagnetism briefly.
14. Write a short note on anisotropic
magnetoresistance.
Or
Write an account on magnetic tunnelling junction.
15. Differentiate between SRAM and DRAM.
Or
Draw the circuit diagram for magnetoresistive
RAM.
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Part C 10 30)
Answer any three questions.
16. Discuss in detail on classification of optical storages.
17. Explain the holographic data storage methods in detail.
18. Differentiate between ferromagnetic and
anti-ferromagnetic materials.
19. What is GMR effect? Explain the types of GMR.
20. Discuss in detail on probe based data storage.