M.Sc. DEGREE EXAMINATION, APRIL 2017
Fourth Semester
Nanoscience and Technology
INFORMATION STORAGE MATERIALS AND DEVICES
(CBCS 2013 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 x 2 20)
Answer all questions.
1. Name any two data storage materials.
2. What is volatile memory?
3. What is SIL?
4. What is meant by disk formatting?
5. Define magnetism.
6. What is magnetic anisotropy?
7. Define magnetoresistance.
8. What is magnetic tunnelling junction?
9. Give any two examples for spin based storage device.
10. What is FeRAM?
Sub. Code
533504
RW-208
2
Wk 4
Part B x 5 25)
Answer all questions.
11. Write a short note on optical memory.
Or
Explain the significance of nanotechnology in data
storage.
12. How does the phase change memory used for data
storage application?
Or
Write an account on magneto-optical disks.
13. Give a short note on hysteresis loop in magnetic
materials.
Or
Explain the domain theory of ferromagnetism in
briefly.
14. Write a short note on spintronics.
Or
Give a brief note on GMR.
15. What is a probe? And how does it used in data
storage applications?
Or
Explain the concept of quantum information
storage.
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Wk 4
Part C x 10 30)
Answer any three questions.
16. Classify solid state memory devices and explain in detail.
17. Discuss in detail on reading and recording heads.
18. Describe the superparamagnetism with suitable
schematics.
19. Write in detail on anisotropic magnetoresistance.
20. Describe in detail on DRAM and SRAM for data storage
applications.
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