Hall Ticket No Question Paper Code: AHS006
INSTITUTE OF AERONAUTICAL ENGINEERING
(Autonomous)
B.Tech I Semester End Examinations (Supplementary) February, 2018
Regulation: IARE R16
ENGINEERING PHYSICS
Common for (CSE IT ECE EEE)
Time: 3 Hours Max Marks: 70
Answer ONE Question from each Unit
All Questions Carry Equal Marks
All parts of the question must be answered in one place only
UNIT I
1. What are ferromagnetic materials? Discuss the hysteresis loop with B-H curve.
Sulphur is elemental solid dielectric whose dielectric constant is 3.4. Assuming a cubic lattice for
its structure, calculate the electronic polarizability of sulphur. Given that sulphur density is 2.07
x103kg/m3 and atomic weight is 32.07.
2. What is Magnetic dipole moment? Discuss the classification of magnetic materials.
An elemental solid dielectric material has polarizability m2. Assuming the internal
field to be Lorentz field. Calculate the dielectric constant for the material if the material has
3x1028 atoms /m3.
UNIT II
3. Explain the construction and working of ruby laser with neat diagram.
Discuss the conditions for laser action and draw block diagram of laser system.
4. Give the construction and working of He-Ne laser.

Calculate the energy difference in eV between the two energy levels of Neon atoms of He-Ne laser
if the transition between these levels results in emission of light of wavelength 632.8nm
UNIT III
5. Explain briefly bottom-up fabrication of nanomaterial by sol-gel method.
Explain quantum confinement with respect to principle of nanotechnology.
6. Explain chemical vapour deposition to synthesize nanomaterials.
Explain the characterization of nanomaterial by XRD.
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UNIT IV
7. What are the properties of matter waves? Obtain the expression of wave function for a particle
in one dimensional potential well of infinite height.
Calculate the velocity and kinetic energy of an electron of wavelength 1.66 X

8. Describe Davisson and Germer experiment to verify matter waves.
Give the physical significance of wave function.
UNIT V
9. Derive an expression for the carrier concentration in p -type semiconductor,
The energy gap of Ga As is 1.42 eV. The effective masses of electrons and holes are: 0.067 m0
and 0.48 m0 respectively. Calculate the concentration of electrons at 300 K.
10. Explain Hall effect and mention its uses.
Derive an expression for number of electrons per unit volume in the conduction band of n type
semiconductor.