Hall Ticket No Question Paper Code: AHS006
INSTITUTE OF AERONAUTICAL ENGINEERING
(Autonomous)
Four Year B.Tech I Semester Supplementary Examinations July, 2018
Regulation: IARE R16
ENGINEERING PHYSICS
Time: 3 Hours (Common to CSE IT ECE EEE) Max Marks: 70
Answer ONE Question from each Unit
All Questions Carry Equal Marks
All parts of the question must be answered in one place only
UNIT I
1. What is polarization? Explain different types of polarizations mechanisms with suitable diagram
and formula.
Establish the relation between dielectric constant and its dielectric susceptibility.
2. Explain magnetic dipole moment, magnetization and magnetic susceptibility with suitable
diagram and formula.
The susceptibility of paramagnetic FeCl3 is 3.7 x at 270 C.What will be the value of its
relative permeability at 2000K and 5000K.
UNIT II
3. Obtain an expression for energy density of radiation under equilibrium condition in terms of
Einstein's coefficients also explain with conditions leading to laser action.
List the applications of laser in industry and medicine.
4. Explain the construction and working of a semiconductor laser with suitable diagram.
Discuss in brief the characteristics of a laser beam.
UNIT III
5. Discuss the variation of density of states for various quantum structures.
How nonmaterial's can be prepared using chemical vapour deposition method? Analyze.
6. The size of the particle decides the various properties like electrical ,mechanical, magnetic of the
nanomaterials? Justify.
Explain TEM. How it is helpful in characterization of nonmaterials.
UNIT IV
7. Explain the de Broglie hypotheses for the matter waves and illustrate the physical significance
of the wave function.
Describe the construction and working of the Davisson-Germer experiment(D-G) and hence to
prove the wave nature of the electron.
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8. Set up time independent Schrödinger wave equation for a particle and explain Eigen function
and Eigen values.
Compute the de Broglie wavelength for a neutron moving with one tenth part of the velocity of
light.(mn=1.674x10􀀀27 kg). .
UNIT V
9. Prove that the fermi level in an intrinsic semiconductor is half of its energy gap.
Explain Hall Effect. Obtain the Hall voltage in terms of Hall coefficient for a P type semiconductor.

10. Derive an expression for the carrier concentration of an intrinsic semiconductor. Explain the
concept of hole in semiconductors.
Explain the fermi level existence in case of p type and n type semiconductors at T=0K using the
energy level diagram.
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