Exam Details

Subject analog electronic circuits
Paper paper 2
Exam / Course b.tech
Department
Organization Visvesvaraya Technological University
Position
Exam Date 2018
City, State karnataka, belagavi


Question Paper

Third Semester B.E Degree(CBCS) Examination
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing
1 a Draw a double ended clipper circuit and explain its working principle with transfer
characteristics.
b For the sketch shown fig. below, Vi varies
sketch the output voltage Vo to the same time scale as
the input voltage. Assume ideal diode
c Write the procedure for analyzing the
clamping circuit, determine output voltage
for the network shown in fig. Assume
f=1000Hz and ideal diode.
2 a Consider a fixed bias circuit of a transistor. Obtain expressions for stability factor S
SVBE and Sβ. Draw the circuit diagram
b For the circuit shown in fig.
c Define operating point. Explain its significance
3 a Obtain parameter model for CE configuration.
b Draw the circuit of common base amplifier. Derive the expression for current gain, voltage
gain, input and output impedance using the model
c For the emitter follower circuit shown
values of re, Zi, Zo, voltage gain(A
assume β=100 and ro= 50kΩ
USN
Model Question Paper
Analog Electronic circuits
one full question from each m
Module 1
from 0 to 150
or
find IC, VB, VE, R1 and SICO
Module 2
er in fig. obtain the
AV) and current gain
Ω
17EE34
ne module
7 Marks
7 Marks
6 Marks
SICO, 9 Marks
7 Marks
4 Marks
5 Marks
7 Marks
8 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
or
4 a Define h parameters and hence derive h-parameter model of CC-BJT 6 Marks
b State and prove miller's theorem 6 Marks
c For common base amplifier shown in fig.
determine Zi, AI, AV, and ZO using complete
hybrid equivalent model. (Given hie=1.6kΩ,
hfe=100, hre=2 x hoe=20μS.)
8 Marks
Module 3
5 a Draw the circuit of Darlington emitter follower. Derive the expression for current gain,
voltage gain, input and output impedance using the model.
10Marks
b For the cascode circuit shown below calculate
The dc bias voltages VB1,VB2,VC2
The no load voltage gain and the output voltages
VO2=VO
The voltage gain with load of 10kΩ connected to
the second stage and the output voltage VO
Input and output impedances
10 Marks
or
6 a For the voltage series feedback amplifier topology, obtain expression for AV and Rif. Also
explain the principle of voltage amplifier used in feedback amplifiers.
10 Marks
b List and explain the advantages of employing negative feedback in amplifiers 6 Marks
c Explain the difference between cascade and cascode connections and its applications 4 Marks
Module 4
7 a With a neat diagram explain transformer coupled power amplifier and derive the
expression for AC power delivered to the load, show that the maximum efficiency is 50%.
10 Marks
b State and explain Barkhausen criterion for sustained oscillations. 5 Marks
c A crystal has following parameters:
L=0.334H, 0.065pF, CM=1pF, R=5.5kΩ
Calculate series resonant frequency.
Calculate parallel resonant frequency.
5 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
Find Q of the crystal.
or
8 a Explain the working of complementary symmetry class B amplifier 6 Marks
b Derive an expression for frequency of oscillations in wien bridge oscillator 8 Marks
c Find the values of RC, R. and C for an RC -phase shift oscillator for a frequency of
oscillation of 1000 Hz. A transistor is having hfe=200 and hie=2kΩ.
6 Marks
Module 5
9 a Draw the circuit for JFET common source amplifier using fixed biased configuration and
determine its input impedance, output impedance and voltage gain using ac equivalent
small signal model
10 Marks
b Explain the working and construction of JFET in detail and draw its transfer characteristics
and drain characteristics.
10 Marks
or
10 a Explain the depletion and enhancement type MOSFETs, their characteristics and
frequency response
10 Marks
b For the circuit shown in fig.
Calculate Zi and Zo
Calculate AV
Calculate VO, for Vi=1mV(rms)
Repeat from to
neglecting the effect of rd10
(Given IDSS=12mA, VP=-3.5V, VGSQ=
0.75V, rd=50kΩ)
10 Marks


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  • additional mathematics-i
  • advanced calculus and numerical methods
  • alternative building materials
  • analog and digital communication systems
  • analog electronic circuits
  • analog electronics
  • automobile engineering
  • automotive electronics
  • basic electrical engineering
  • basic electronics i & ii
  • c-programming for problem solving
  • calculus and linear algebra
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  • computer integrated manufacturing
  • constitution of india, professional ethics and human rights
  • construction management and entrepreneurship
  • control engineering
  • design for manufacturing
  • design of machine elements
  • design of steel structural elements
  • digital electronics
  • digital system design
  • electric circuit analysis
  • electrical and electronic measurements
  • electronic instrumentation
  • elements of civil engineering and mechanics
  • elements of mechanical engineering
  • embedded system design and programming
  • energy auditing
  • energy engineering
  • engineering chemistry
  • engineering electromagnetics
  • engineering graphics
  • engineering mathematics – iv
  • engineering mathematics-i
  • engineering mathematics-ii
  • engineering mathematics-iii
  • engineering physics
  • environmental protection and management
  • finite element method
  • finite element method of analysis
  • fluid power systems
  • heat transfer
  • high voltage engineering
  • highway engineering
  • integration of distributed generation
  • kannada kali
  • kannada mansu
  • machine learning
  • matrix method of structural analysis
  • mechatronics
  • metal forming
  • mobile communication
  • network analysis
  • numerical methods and applications
  • oops with c++
  • power and industrial electronics
  • power system analysis 2
  • power system protection
  • smart materials & mems
  • software application lab
  • solid waste management
  • technical english – 1
  • total quality management
  • transformers and generators
  • tribology
  • water resources management
  • water supply and treatment engineering