Exam Details
| Subject | basic electronic circuits | |
| Paper | ||
| Exam / Course | diploma engineering | |
| Department | ||
| Organization | Gujarat Technological University | |
| Position | ||
| Exam Date | May, 2018 | |
| City, State | gujarat, ahmedabad |
Question Paper
1/9
Seat No.: Enrolment
GUJARAT TECHNOLOGICAL UNIVERSITY
DIPLOMA ENGINEERING SEMESTER 2(C2D) • EXAMINATION SUMMER 2018
Subject Code: C322401 Date: 21-May-2018
Subject Name: BASIC ELECTRONIC CIRCUITS
Time:10:30 AM TO 12:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumption wherever necessary.
3. Each question is of 1 mark.
4. Use of SIMPLE CALCULATOR is permissible. (Scientific/Higher Version not allowed)
5. English version is authentic.
No.
Question Text and Option.
1.
A semiconductor is formed by ........ bonds.
A.
covalent
B.
electrovalent
C.
co-ordinate
D.
none of the above
.......
A.
B.
C.
D.
2.
A semiconductor has ........temperature coefficient of resistance.
A.
positive
B.
Zero
C.
negative
D.
none of the above
.............ત
A.
B.
C.
D.
3.
The most commonly used semiconductor is........
A.
germanium
B.
Silicon
C.
carbon
D.
Sulphur
............છે.
A.
B.
C.
D.
4.
A semiconductor has generally ........valence electrons.
A.
2
B.
3
C.
6
D.
4
A.
B.
C.
D.
5.
In insulators, the energy gap between valence and conduction bands is ........
A.
very large
B.
Zero
C.
very small
D.
none of the above
A.
B.
C.
D.
6.
In a conductor, the energy gap between valence and conduction bands is ........
A.
large
B.
very large
C.
very small
D.
none of the above
2/9
A.
B.
C.
D.
7.
In a semiconductor, the energy gap between valence and conduction bands is about ........
A.
15 eV
B.
100 eV
C.
50 eV
D.
1 eV
A.
eV
B.
eV
C.
eV
D.
eV
8.
When a pure semiconductor is heated, its resistance ........
A.
goes up
B.
goes down
C.
remains the same
D.
cannot say
A.
B.
C.
D.
9.
When a pentavalent impurity is added to a pure semiconductor, it becomes ........
A.
an insulator
B.
an intrinsic semiconductor
C.
p-type semiconductor
D.
n-type semiconductor
A.
B.
C.
D.
10.
Addition of pentavalent impurity to a semiconductor creates many ........
A.
free electrons
B.
Holes
C.
valence electrons
D.
bound electrons
A.
B.
C.
D.
11.
A pentavalent impurity has ........ valence electrons.
A.
3
B.
5
C.
4
D.
6
A.
B.
C.
D.
12.
A trivalent impurity has ........ valence electrons.
A.
4
B.
5
C.
6
D.
3
A.
B.
C.
D.
13.
Addition of trivalent impurity to a semiconductor creates many ........
A.
holes
B.
free electrons
C.
valence electrons
D.
bound electrons
A.
B.
C.
D.
14.
A hole in a semiconductor is defined as ........
A.
a free electron
B.
the incomplete part of an electron pair
bond
C.
a free proton
D.
a free neutron
……..
A.
B.
C.
D.
15.
In a semiconductor, current conduction is due ........
A.
only to holes
B.
only to free electrons
3/9
C.
to holes and free electrons
D.
none of the above
........ન
A.
B.
C.
D.
16.
A forward biased pn junction has a resistance of the ........
A.
order of Ω
B.
order of k Ω
C.
order of M Ω
D.
none of the above
A.
Ω
B.
k Ω
C.
M Ω
D.
17.
The battery connections required to forward bias a pn junction are ........
A.
+ve terminal to p and terminal to n
B.
terminal to p and +ve terminal to n
C.
terminal to p and terminal to n
D.
none of the above
A.
B.
C.
D.
18.
The barrier voltage at a pn junction for germanium is about ........
A.
3.5 V
B.
3V
C.
zero
D.
0.3 V
A.
V
B.
V
C.
V
D.
V
19.
. In the depletion region of a pn junction, there is a shortage of ..........
A.
acceptor ions
B.
holes and electrons
C.
donor ions
D.
none of the above
A.
B.
C.
D.
20.
A reverse biased pn junction has ........
A.
very narrow depletion layer
B.
almost no current
C.
very low resistance
D.
large current flow
A.
B.
C.
D.
21.
A pn junction acts as a ........
A.
controlled switch
B.
bidirectional switch
C.
unidirectional switch
D.
none of the above
A.
B.
C.
D.
22.
A reverse biased pn junction has resistance of the........
A.
order of Ω
B.
order of k Ω
C.
order of M Ω
D.
none of the above
.....
A.
Ω
B.
k Ω
C.
M Ω
D.
23.
The leakage current across a pn junction is due to ........
A.
minority carriers
B.
majority carriers
4/9
C.
junction capacitance
D.
none of the above
…..
A.
B.
C.
D.
24.
With forward bias to a pn junction, the width of depletion layer ........
A.
decreases
B.
Increases
C.
remains the same
D.
none of the above
.
A.
B.
C.
D.
25.
The leakage current in a pn junction is of the order of ........
A.
A
B.
mA
C.
kA
D.
…..
A.
A
B.
mA
C.
kA
D.
26.
In an intrinsic semiconductor, the number of free electrons ........
A.
equals the number of holes
B.
is greater than the number of holes
C.
is less than the number of holes
D.
none of the above
A.
B.
C.
D.
27.
At room temperature, an intrinsic semiconductor has ........
A.
many holes only
B.
a few free electrons and holes
C.
many free electrons only
D.
no holes or free electrons
A.
B.
C.
D.
28.
At absolute temperature, an intrinsic semiconductor has ........
A.
a few free electrons
B.
many holes
C.
many free electrons
D.
no holes or free electrons
A.
B.
C.
D.
29.
Zener diodes are used primarily as……
A.
amplifiers
B.
voltage regulators
C.
rectifiers
D.
Oscillators
A.
B.
C.
D.
30.
A pn junction that radiates energy as light instead of as heat is called a
A.
LED
B.
photo-diode
C.
photocell
D.
Zener diode
A.
B.
C.
D.
31.
The capacitance of a varactor diode increases when reverse voltage across it
A.
decreases
B.
Increases
C.
breaks down
D.
stores charge
A.
B.
C.
D.
32.
To display the digit 8 in a seven-segment indicator
5/9
A.
C must be lighted
B.
G must be off
C.
F must be on
D.
All segments must be lighted
..........
A.
C
B.
G
C.
F
D.
33.
A photo-diode is normally
A.
forward-biased
B.
reverse-biased
C.
Neither forward nor reverse biased
D.
Emitting light
e ........
A.
B.
C.
D.
34.
When the reverse voltage increases, the junction capacitance
A.
decreases
B.
stays the same
C.
increases
D.
has more bandwidth
..........
A.
B.
C.
D.
35.
The device associated with voltage-controlled capacitance is a
A.
LED
B.
photo-diode
C.
varactor diode
D.
Zener diode
A.
B.
C.
D.
36.
The ripple factor of a half-wave rectifier is ........
A.
2
B.
1.21
C.
2.5
D.
0.48
...........છે.
A.
B.
C.
D.
37.
There is a need of transformer for ........
A.
half-wave rectifier
B.
centre-tap full-wave rectifier
C.
bridge full-wave rectifier
D.
none of the above
........મ
A.
B.
C.
D.
38.
The PIV rating of each diode in a bridge rectifier is ........ of the equivalent centretap rectifier.
A.
one-half
B.
the same as
C.
twice
D.
four times
PIV ........
A.
B.
C.
D.
39.
For the same secondary voltage, the output voltage from a centre-tap rectifier is ........than that of bridge rectifier.
A.
twice
B.
Thrice
C.
four times
D.
one-half
A.
B.
C.
D.
40.
If the PIV rating of a diode is exceeded, ........
A.
the diode conducts poorly
B.
the diode is destroyed
C.
the diode behaves as zener diode
D.
none of the above
6/9
તો............
A.
B.
C.
D.
41.
The maximum efficiency of a half-wave rectifier is ...........
A.
40.6%
B.
81.2%
C.
50%
D.
25%
A.
B.
C.
D.
42.
The most widely used rectifier is ...........
A.
half-wave rectifier
B.
centre-tap full-wave rectifier
C.
bridge full-wave rectifier
D.
none of the above
A.
B.
C.
D.
43.
A transistor has ........
A.
one pn junction
B.
two pn junctions
C.
three pn junctions
D.
four pn junctions
A.
B.
C.
D.
44.
The number of depletion layers in a transistor is ........
A.
four
B.
Three
C.
one
D.
Two
A.
B.
C.
D.
45.
The base of a transistor is ....... doped.
A.
heavily
B.
Moderately
C.
lightly
D.
none of the above
A.
B.
C.
D.
46.
The element that has the biggest size in a transistor is ........
A.
collector
B.
Base
C.
Emitter
D.
collector-base junction
...........છે.
A.
B.
C.
D.
47.
In a pnp transistor, the current carriers are ........
A.
acceptor ions
B.
donor ions
C.
free electrons
D.
Holes
A.
B.
C.
D.
48.
The collector of a transistor is ........ doped.
A.
Heavily
B.
Moderately
7/9
C.
Lightly
D.
none of the above
A.
B.
C.
D.
49.
A transistor is a ......... operated device.
A.
Current
B.
Voltage
C.
both voltage and current
D.
none of the above
A.
B.
C.
D.
50.
In an npn transistor, ....... are the minority carriers.
A.
free electrons
B.
Holes
C.
donor ions
D.
acceptor ions
A.
B.
C.
D.
51.
The emitter of a transistor is ........ doped.
A.
Lightly
B.
Heavily
C.
moderately
D.
none of the above
A.
B.
C.
D.
52.
In a transistor, the base current is about ........ of emitter current.
A.
25%
B.
20%
C.
35%
D.
A.
B.
C.
D.
53.
The current IB is ........
A.
electron current
B.
hole current
C.
donor ion current
D.
acceptor ion current
IB
A.
B.
C.
D.
54.
In a transistor, ........
A.
IC IE IB
B.
IB IC IE
C.
IE IC
D.
IE IC IB
...........
A.
IC IE IB
B.
IB IC IE
C.
IE IC
D.
IE IC IB
55.
The value of a transistor is ........
A.
more than 1
B.
less than 1
C.
1
D.
none of the above
......
A.
B.
C.
D.
56.
IC αIE .........
A.
IB
B.
ICEO
8/9
C.
ICBO
D.
IC αIE .........
A.
IB
B.
ICEO
C.
ICBO
D.
57.
The output impedance of a transistor is ........
A.
High
B.
Zero
C.
Low
D.
very low
A.
B.
C.
D.
58.
In a transistor, IC 100 mA and IE 100.5 mA. The value of ........
A.
100
B.
50
C.
about 1
D.
200
IC 100 mA IE 100.5 mA β .........
A.
B.
C.
D.
59.
In a transistor if 100 and collector current is 10 mA, then IE is ........
A.
100 mA
B.
100.1 mA
C.
110 mA
D.
none of the above
β IE =......
A.
B.
C.
D.
60.
The value of a transistor is generally ........
A.
1
B.
less than 1
C.
between 20 and 500
D.
above 500
β ......
A.
B.
C.
D.
61.
The most commonly used transistor arrangement is ........ arrangement.
A.
common emitter
B.
common base
C.
common collector
D.
none of the above
A.
B.
C.
D.
62.
The input impedance of a transistor connected in .......... arrangement is the highest.
A.
common emitter
B.
common collector
C.
common base
D.
none of the above
.......
A.
B.
C.
D.
63.
The output impedance of a transistor connected in ......... arrangement is the highest.
A.
common emitter
B.
common collector
C.
common base
D.
none of the above
.......
A.
B.
C.
D.
64.
The phase difference between the input and output voltages in a common base arrangement
is .........
A.
180º
B.
90º
9/9
C.
270º
D.
0º
A.
B.
C.
D.
65.
The power gain of a transistor connected in ........ arrangement is the highest.
A.
common emitter
B.
common base
C.
common collector
D.
none of the above
A.
B.
C.
D.
66.
The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ........
A.
0º
B.
180º
C.
90º
D.
270º
A.
B.
C.
D.
67.
The voltage gain of a transistor connected in ........ arrangement is the highest.
A.
common base
B.
common collector
C.
common emitter
D.
none of the above
A.
B.
C.
D.
68.
As the temperature of a transistor goes up, the base-emitter resistance ........
A.
decreases
B.
Increases
C.
remains the same
D.
none of the above
A.
B.
C.
D.
69.
If the value of α is 0.9, then value of β is ........
A.
9
B.
0.9
C.
900
D.
90
α β
A.
B.
C.
D.
70.
The arrow in the symbol of a transistor indicates the direction of .........
A.
electron current in the emitter
B.
electron current in the collector
C.
hole current in the emitter
D.
donor ion current
A.
B.
C.
D.
Seat No.: Enrolment
GUJARAT TECHNOLOGICAL UNIVERSITY
DIPLOMA ENGINEERING SEMESTER 2(C2D) • EXAMINATION SUMMER 2018
Subject Code: C322401 Date: 21-May-2018
Subject Name: BASIC ELECTRONIC CIRCUITS
Time:10:30 AM TO 12:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumption wherever necessary.
3. Each question is of 1 mark.
4. Use of SIMPLE CALCULATOR is permissible. (Scientific/Higher Version not allowed)
5. English version is authentic.
No.
Question Text and Option.
1.
A semiconductor is formed by ........ bonds.
A.
covalent
B.
electrovalent
C.
co-ordinate
D.
none of the above
.......
A.
B.
C.
D.
2.
A semiconductor has ........temperature coefficient of resistance.
A.
positive
B.
Zero
C.
negative
D.
none of the above
.............ત
A.
B.
C.
D.
3.
The most commonly used semiconductor is........
A.
germanium
B.
Silicon
C.
carbon
D.
Sulphur
............છે.
A.
B.
C.
D.
4.
A semiconductor has generally ........valence electrons.
A.
2
B.
3
C.
6
D.
4
A.
B.
C.
D.
5.
In insulators, the energy gap between valence and conduction bands is ........
A.
very large
B.
Zero
C.
very small
D.
none of the above
A.
B.
C.
D.
6.
In a conductor, the energy gap between valence and conduction bands is ........
A.
large
B.
very large
C.
very small
D.
none of the above
2/9
A.
B.
C.
D.
7.
In a semiconductor, the energy gap between valence and conduction bands is about ........
A.
15 eV
B.
100 eV
C.
50 eV
D.
1 eV
A.
eV
B.
eV
C.
eV
D.
eV
8.
When a pure semiconductor is heated, its resistance ........
A.
goes up
B.
goes down
C.
remains the same
D.
cannot say
A.
B.
C.
D.
9.
When a pentavalent impurity is added to a pure semiconductor, it becomes ........
A.
an insulator
B.
an intrinsic semiconductor
C.
p-type semiconductor
D.
n-type semiconductor
A.
B.
C.
D.
10.
Addition of pentavalent impurity to a semiconductor creates many ........
A.
free electrons
B.
Holes
C.
valence electrons
D.
bound electrons
A.
B.
C.
D.
11.
A pentavalent impurity has ........ valence electrons.
A.
3
B.
5
C.
4
D.
6
A.
B.
C.
D.
12.
A trivalent impurity has ........ valence electrons.
A.
4
B.
5
C.
6
D.
3
A.
B.
C.
D.
13.
Addition of trivalent impurity to a semiconductor creates many ........
A.
holes
B.
free electrons
C.
valence electrons
D.
bound electrons
A.
B.
C.
D.
14.
A hole in a semiconductor is defined as ........
A.
a free electron
B.
the incomplete part of an electron pair
bond
C.
a free proton
D.
a free neutron
……..
A.
B.
C.
D.
15.
In a semiconductor, current conduction is due ........
A.
only to holes
B.
only to free electrons
3/9
C.
to holes and free electrons
D.
none of the above
........ન
A.
B.
C.
D.
16.
A forward biased pn junction has a resistance of the ........
A.
order of Ω
B.
order of k Ω
C.
order of M Ω
D.
none of the above
A.
Ω
B.
k Ω
C.
M Ω
D.
17.
The battery connections required to forward bias a pn junction are ........
A.
+ve terminal to p and terminal to n
B.
terminal to p and +ve terminal to n
C.
terminal to p and terminal to n
D.
none of the above
A.
B.
C.
D.
18.
The barrier voltage at a pn junction for germanium is about ........
A.
3.5 V
B.
3V
C.
zero
D.
0.3 V
A.
V
B.
V
C.
V
D.
V
19.
. In the depletion region of a pn junction, there is a shortage of ..........
A.
acceptor ions
B.
holes and electrons
C.
donor ions
D.
none of the above
A.
B.
C.
D.
20.
A reverse biased pn junction has ........
A.
very narrow depletion layer
B.
almost no current
C.
very low resistance
D.
large current flow
A.
B.
C.
D.
21.
A pn junction acts as a ........
A.
controlled switch
B.
bidirectional switch
C.
unidirectional switch
D.
none of the above
A.
B.
C.
D.
22.
A reverse biased pn junction has resistance of the........
A.
order of Ω
B.
order of k Ω
C.
order of M Ω
D.
none of the above
.....
A.
Ω
B.
k Ω
C.
M Ω
D.
23.
The leakage current across a pn junction is due to ........
A.
minority carriers
B.
majority carriers
4/9
C.
junction capacitance
D.
none of the above
…..
A.
B.
C.
D.
24.
With forward bias to a pn junction, the width of depletion layer ........
A.
decreases
B.
Increases
C.
remains the same
D.
none of the above
.
A.
B.
C.
D.
25.
The leakage current in a pn junction is of the order of ........
A.
A
B.
mA
C.
kA
D.
…..
A.
A
B.
mA
C.
kA
D.
26.
In an intrinsic semiconductor, the number of free electrons ........
A.
equals the number of holes
B.
is greater than the number of holes
C.
is less than the number of holes
D.
none of the above
A.
B.
C.
D.
27.
At room temperature, an intrinsic semiconductor has ........
A.
many holes only
B.
a few free electrons and holes
C.
many free electrons only
D.
no holes or free electrons
A.
B.
C.
D.
28.
At absolute temperature, an intrinsic semiconductor has ........
A.
a few free electrons
B.
many holes
C.
many free electrons
D.
no holes or free electrons
A.
B.
C.
D.
29.
Zener diodes are used primarily as……
A.
amplifiers
B.
voltage regulators
C.
rectifiers
D.
Oscillators
A.
B.
C.
D.
30.
A pn junction that radiates energy as light instead of as heat is called a
A.
LED
B.
photo-diode
C.
photocell
D.
Zener diode
A.
B.
C.
D.
31.
The capacitance of a varactor diode increases when reverse voltage across it
A.
decreases
B.
Increases
C.
breaks down
D.
stores charge
A.
B.
C.
D.
32.
To display the digit 8 in a seven-segment indicator
5/9
A.
C must be lighted
B.
G must be off
C.
F must be on
D.
All segments must be lighted
..........
A.
C
B.
G
C.
F
D.
33.
A photo-diode is normally
A.
forward-biased
B.
reverse-biased
C.
Neither forward nor reverse biased
D.
Emitting light
e ........
A.
B.
C.
D.
34.
When the reverse voltage increases, the junction capacitance
A.
decreases
B.
stays the same
C.
increases
D.
has more bandwidth
..........
A.
B.
C.
D.
35.
The device associated with voltage-controlled capacitance is a
A.
LED
B.
photo-diode
C.
varactor diode
D.
Zener diode
A.
B.
C.
D.
36.
The ripple factor of a half-wave rectifier is ........
A.
2
B.
1.21
C.
2.5
D.
0.48
...........છે.
A.
B.
C.
D.
37.
There is a need of transformer for ........
A.
half-wave rectifier
B.
centre-tap full-wave rectifier
C.
bridge full-wave rectifier
D.
none of the above
........મ
A.
B.
C.
D.
38.
The PIV rating of each diode in a bridge rectifier is ........ of the equivalent centretap rectifier.
A.
one-half
B.
the same as
C.
twice
D.
four times
PIV ........
A.
B.
C.
D.
39.
For the same secondary voltage, the output voltage from a centre-tap rectifier is ........than that of bridge rectifier.
A.
twice
B.
Thrice
C.
four times
D.
one-half
A.
B.
C.
D.
40.
If the PIV rating of a diode is exceeded, ........
A.
the diode conducts poorly
B.
the diode is destroyed
C.
the diode behaves as zener diode
D.
none of the above
6/9
તો............
A.
B.
C.
D.
41.
The maximum efficiency of a half-wave rectifier is ...........
A.
40.6%
B.
81.2%
C.
50%
D.
25%
A.
B.
C.
D.
42.
The most widely used rectifier is ...........
A.
half-wave rectifier
B.
centre-tap full-wave rectifier
C.
bridge full-wave rectifier
D.
none of the above
A.
B.
C.
D.
43.
A transistor has ........
A.
one pn junction
B.
two pn junctions
C.
three pn junctions
D.
four pn junctions
A.
B.
C.
D.
44.
The number of depletion layers in a transistor is ........
A.
four
B.
Three
C.
one
D.
Two
A.
B.
C.
D.
45.
The base of a transistor is ....... doped.
A.
heavily
B.
Moderately
C.
lightly
D.
none of the above
A.
B.
C.
D.
46.
The element that has the biggest size in a transistor is ........
A.
collector
B.
Base
C.
Emitter
D.
collector-base junction
...........છે.
A.
B.
C.
D.
47.
In a pnp transistor, the current carriers are ........
A.
acceptor ions
B.
donor ions
C.
free electrons
D.
Holes
A.
B.
C.
D.
48.
The collector of a transistor is ........ doped.
A.
Heavily
B.
Moderately
7/9
C.
Lightly
D.
none of the above
A.
B.
C.
D.
49.
A transistor is a ......... operated device.
A.
Current
B.
Voltage
C.
both voltage and current
D.
none of the above
A.
B.
C.
D.
50.
In an npn transistor, ....... are the minority carriers.
A.
free electrons
B.
Holes
C.
donor ions
D.
acceptor ions
A.
B.
C.
D.
51.
The emitter of a transistor is ........ doped.
A.
Lightly
B.
Heavily
C.
moderately
D.
none of the above
A.
B.
C.
D.
52.
In a transistor, the base current is about ........ of emitter current.
A.
25%
B.
20%
C.
35%
D.
A.
B.
C.
D.
53.
The current IB is ........
A.
electron current
B.
hole current
C.
donor ion current
D.
acceptor ion current
IB
A.
B.
C.
D.
54.
In a transistor, ........
A.
IC IE IB
B.
IB IC IE
C.
IE IC
D.
IE IC IB
...........
A.
IC IE IB
B.
IB IC IE
C.
IE IC
D.
IE IC IB
55.
The value of a transistor is ........
A.
more than 1
B.
less than 1
C.
1
D.
none of the above
......
A.
B.
C.
D.
56.
IC αIE .........
A.
IB
B.
ICEO
8/9
C.
ICBO
D.
IC αIE .........
A.
IB
B.
ICEO
C.
ICBO
D.
57.
The output impedance of a transistor is ........
A.
High
B.
Zero
C.
Low
D.
very low
A.
B.
C.
D.
58.
In a transistor, IC 100 mA and IE 100.5 mA. The value of ........
A.
100
B.
50
C.
about 1
D.
200
IC 100 mA IE 100.5 mA β .........
A.
B.
C.
D.
59.
In a transistor if 100 and collector current is 10 mA, then IE is ........
A.
100 mA
B.
100.1 mA
C.
110 mA
D.
none of the above
β IE =......
A.
B.
C.
D.
60.
The value of a transistor is generally ........
A.
1
B.
less than 1
C.
between 20 and 500
D.
above 500
β ......
A.
B.
C.
D.
61.
The most commonly used transistor arrangement is ........ arrangement.
A.
common emitter
B.
common base
C.
common collector
D.
none of the above
A.
B.
C.
D.
62.
The input impedance of a transistor connected in .......... arrangement is the highest.
A.
common emitter
B.
common collector
C.
common base
D.
none of the above
.......
A.
B.
C.
D.
63.
The output impedance of a transistor connected in ......... arrangement is the highest.
A.
common emitter
B.
common collector
C.
common base
D.
none of the above
.......
A.
B.
C.
D.
64.
The phase difference between the input and output voltages in a common base arrangement
is .........
A.
180º
B.
90º
9/9
C.
270º
D.
0º
A.
B.
C.
D.
65.
The power gain of a transistor connected in ........ arrangement is the highest.
A.
common emitter
B.
common base
C.
common collector
D.
none of the above
A.
B.
C.
D.
66.
The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ........
A.
0º
B.
180º
C.
90º
D.
270º
A.
B.
C.
D.
67.
The voltage gain of a transistor connected in ........ arrangement is the highest.
A.
common base
B.
common collector
C.
common emitter
D.
none of the above
A.
B.
C.
D.
68.
As the temperature of a transistor goes up, the base-emitter resistance ........
A.
decreases
B.
Increases
C.
remains the same
D.
none of the above
A.
B.
C.
D.
69.
If the value of α is 0.9, then value of β is ........
A.
9
B.
0.9
C.
900
D.
90
α β
A.
B.
C.
D.
70.
The arrow in the symbol of a transistor indicates the direction of .........
A.
electron current in the emitter
B.
electron current in the collector
C.
hole current in the emitter
D.
donor ion current
A.
B.
C.
D.
Other Question Papers
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