PAPER-II ELECTRONIC SCIENCE Signature and Name of Invigilator
1.
(Signature) OMR Sheet No. ............................................... (To be filled by the Candidate)

(Name)
Roll No.


2.
(Signature) (In figures as per admission card)



(Name) Roll (In words)
J 8 8 1 6

Time 1 1/4 hours] [Maximum Marks 100
Number of Pages in this Booklet 16 Instructions for the Candidates
1.
Write your roll number in the space provided on the top ofthis page.

2.
This paper consists of fifty multiple-choice type of questions.

3.
At the commencement of examination, the question bookletwill be given to you. In the first 5 minutes, you are requestedto open the booklet and compulsorily examine it as below


To have access to the Question Booklet, tear off the paper seal on the edge of this cover page. Do not accepta booklet without sticker-seal and do not accept an openbooklet.


Tally the number of pages and number of questionsin the booklet with the information printed on thecover page. Faulty booklets due to pages/questionsmissing or duplicate or not in serial order or anyother discrepancy should be got replaced immediatelyby a correct booklet from the invigilator within theperiod of 5 minutes. Afterwards, neither the QuestionBooklet will be replaced nor any extra time will begiven.


After this verification is over, the Test Booklet Numbershould be entered on the OMR Sheet and the OMR Sheet Number should be entered on this Test Booklet.

4.
Each item has four alternative responses marked (3)and You have to darken the circle as indicated below on the correct response against each item.


Example
where is the correct response.

5.
Your responses to the items are to be indicated in the OMR Sheet given inside the Booklet only. If you mark your response at any place other than in the circle in the OMR Sheet, it will not be evaluated.

6.
Read instructions given inside carefully.

7.
Rough Work is to be done in the end of this booklet.

8.
If you write your Name, Roll Number, Phone Number or put any mark on any part of the OMR Sheet, except for the space allotted for the relevant entries, which may disclose your identity, or use abusive language or employ any other unfair means, such as change of response by scratching or using white fluid, you will render yourself liable to disqualification.

9.
You have to return the Original OMR Sheet to the invigilators at the end of the examination compulsorily and must not carry it with you outside the Examination Hall. You are, however, allowed to carry original question booklet and duplicate copy of OMR Sheet on conclusion of examination.

10.
Use only Black Ball point pen provided by C.B.S.E.

11.
Use of any calculator or log table etc., is prohibited.

12.
There is no negative marks for incorrect answers.


Number of Questions in this Booklet 50

¯Ö¸üßõÖÖÙ£ÖµÖÖë Ûêú ×»Ö‹ ×®Ö¤ìü¿Ö
1.
‡ÃÖ ¯Öéšü Ûêú ‰ú¯Ö¸ü ×®ÖµÖŸÖ Ã£ÖÖ®Ö ¯Ö¸ü †¯Ö®ÖÖ ¸üÖê»Ö ®Ö´²Ö¸ü ×»Ö×ÜÖ‹ …

2.
‡ÃÖ ¯ÖÏ¿®Ö-¯Ö¡Ö ´Öë ¯Ö"ÖÖÃÖ ²ÖÆãü×¾ÖÛú»¯ÖßµÖ ¯ÖÏ¿®Ö Æïü …

3.
¯Ö¸üßõÖÖ ¯ÖÏÖ¸ü´³Ö ÆüÖê®Öê ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ †Ö¯ÖÛúÖê ¤êü ¤üß •ÖÖµÖêÝÖß … ¯ÖÆü»Öê ¯ÖÖÑ"Ö ×´Ö®Ö™ü †Ö¯ÖÛúÖê ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ ÜÖÖê»Ö®Öê ŸÖ£ÖÖ ˆÃÖÛúß ×®Ö´®Ö×»Ö×ÜÖŸÖ

•ÖÖÑ"Ö Ûêú ×»Ö‹ פüµÖê •ÖÖµÖëÝÖê, וÖÃÖÛúß •ÖÖÑ"Ö †Ö¯ÖÛúÖê †¾Ö¿µÖ Ûú¸ü®Öß Æîü

¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ ÜÖÖê»Ö®Öê Ûêú ×»Ö‹ ¯Öã×ßÖÛúÖ ¯Ö¸ü »ÖÝÖß ÛúÖÝÖ•Ö Ûúß ÃÖß»ÖÛúÖê ±úÖ›Ìü »Öë … ÜÖã»Öß Æãü‡Ô µÖÖ ×²Ö®ÖÖ Ã™üßÛú¸ü-ÃÖᯙ Ûúß ¯Öã×ßÖÛúÖþÖßÛúÖ¸ü Ûú¸ëü …


Ûú¾Ö¸ü ¯Öéšü ¯Ö¸ü "û¯Öê ×®Ö¤ìü¿ÖÖ®ÖãÃÖÖ¸ü ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ Ûêú ¯Öéšü ŸÖ£ÖÖ¯ÖÏ¿®ÖÖë Ûúß ÃÖÓܵÖÖ ÛúÖê †""ûß ŸÖ¸üÆü "ÖîÛú Ûú¸ü »Öë ×Ûú µÖê ¯Öæ¸êüÆïü … ¤üÖêÂÖ¯ÖæÞÖÔ ¯Öã×ßÖÛúÖ ×•Ö®Ö´Öë ¯Öéšü/¯ÖÏ¿®Ö Ûú´Ö ÆüÖë µÖÖ ¤ãü²ÖÖ¸üÖ †ÖÝÖµÖê ÆüÖë µÖÖ ÃÖß׸üµÖ»Ö ´Öë ÆüÖë †£ÖÖÔŸÖË ×ÛúÃÖß ³Öß ¯ÖÏÛúÖ¸ü Ûúß¡Öã×™ü¯ÖæÞÖÔ ¯Öã×ßÖÛúÖ Ã¾ÖßÛúÖ¸ü Ûú¸ëü ŸÖ£ÖÖ ˆÃÖß ÃÖ´ÖµÖ ˆÃÖê »ÖÖî™üÖÛú¸ü ˆÃÖÛêú ãÖÖ®Ö ¯Ö¸ü ¤æüÃÖ¸üß ÃÖÆüß ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ »Öê »Öë …


‡ÃÖÛêú ×»Ö‹ †Ö¯ÖÛúÖê ¯ÖÖÑ"Ö ×´Ö®Ö™ü פüµÖê •ÖÖµÖëÝÖê … ˆÃÖÛêú ²ÖÖ¤ü ŸÖÖê †Ö¯ÖÛúß ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ ¾ÖÖ¯ÖÃÖ »Öß •ÖÖµÖêÝÖß †Öî¸ü Æüß †Ö¯ÖÛúÖê
†×ŸÖ׸üŒŸÖ ÃÖ´ÖµÖ ×¤üµÖÖ •ÖÖµÖêÝÖÖ …
‡ÃÖ •ÖÖÑ"Ö Ûêú ²ÖÖ¤ü ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ ÛúÖ ®ÖÓ²Ö¸ü OMR ¯Ö¡ÖÛú ¯Ö¸ü †Ó×ÛúŸÖ Ûú¸ëü
†Öî¸ü OMR ¯Ö¡ÖÛú ÛúÖ ®ÖÓ²Ö¸ü ‡ÃÖ ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖ ¯Ö¸ü †Ó×ÛúŸÖ Ûú¸ü ¤ëü …

4.
¯ÖÏŸµÖêÛú ¯ÖÏ¿®Ö Ûêú ×»Ö‹ "ÖÖ¸ü ˆ¢Ö¸ü ×¾ÖÛú»¯Ö ŸÖ£ÖÖ ×¤üµÖê ÝÖµÖê Æïü … †Ö¯ÖÛúÖê ÃÖÆüß ˆ¢Ö¸ü Ûêú ¾Öé¢Ö ÛúÖê ¯Öê®Ö ÃÖê ³Ö¸üÛú¸ü ÛúÖ»ÖÖ Ûú¸ü®ÖÖ Æîü •ÖîÃÖÖ ×Ûú ®Öß"Öê פüÜÖÖµÖÖ ÝÖµÖÖ Æîü


ˆ¤üÖÆü¸üÞÖ

•Ö²Ö×Ûúú(3) ÃÖÆüß ˆ¢Ö¸ü Æîü …
5.
¯ÖÏ¿®ÖÖë Ûêú ˆ¢Ö¸ü Ûêú¾Ö»Ö ¯ÖÏ¿®Ö ¯Öã×ßÖÛúÖ Ûêú †®¤ü¸ü פüµÖê ÝÖµÖê OMR ¯Ö¡ÖÛú ¯Ö¸ü Æüß †Ó×ÛúŸÖ Ûú¸ü®Öê Æïü … µÖפü †Ö¯Ö OMR ¯Ö¡ÖÛú ¯Ö¸ü פüµÖê ÝÖµÖê ¾Öé¢Ö Ûêú †»ÖÖ¾ÖÖ ×ÛúÃÖß †®µÖ ãÖÖ®Ö ¯Ö¸ü ˆ¢Ö¸ü ×"ÖÅ®ÖÖÓ×ÛúŸÖ Ûú¸üŸÖê ŸÖÖê ˆÃÖÛúÖ ´Ö滵ÖÖÓÛú®Ö ®ÖÆüà ÆüÖêÝÖÖ …

6.
†®¤ü¸ü פüµÖê ÝÖµÖê ×®Ö¤ìü¿ÖÖë ÛúÖê ¬µÖÖ®Ö¯Öæ¾ÖÔÛú ¯ÖœÌëü …

7.
Ûú""ÖÖ ÛúÖ´Ö (Rough Work) ‡ÃÖ ¯Öã×ßÖÛúÖ Ûêú †×®ŸÖ´Ö ¯Öéšü ¯Ö¸ü Ûú¸ëü …

8.
µÖפü †Ö¯Ö OMR ¯Ö¡ÖÛú ¯Ö¸ü ×®ÖµÖŸÖ Ã£ÖÖ®Ö Ûêú †»ÖÖ¾ÖÖ †¯Ö®ÖÖ ¸üÖê»Ö ±úÖê®Ö ®Ö´²Ö¸ü µÖÖ ÛúÖê‡Ô ³Öß ‹êÃÖÖ ×"ÖÅ®Ö ×•ÖÃÖÃÖê †Ö¯ÖÛúß ¯ÖÆü"ÖÖ®Ö ÆüÖê ÃÖÛêú, †Ó×ÛúŸÖ Ûú¸üŸÖê Æïü †£Ö¾ÖÖ †³Ö¦ü ³ÖÖÂÖÖ ÛúÖ ¯ÖϵÖÖêÝÖ Ûú¸üŸÖê µÖÖ ÛúÖê‡Ô

†
®µÖ †®Öã×"ÖŸÖ ÃÖÖ¬Ö®Ö ÛúÖ ¯ÖϵÖÖêÝÖ Ûú¸üŸÖê •ÖîÃÖê ×Ûú †Ó×ÛúŸÖ ×ÛúµÖê ÝÖµÖê ˆ¢Ö¸ü ÛúÖê ×´Ö™üÖ®ÖÖ µÖÖ ÃÖ±êú¤ü õÖÖÆüß ÃÖê ²Ö¤ü»Ö®ÖÖ ŸÖÖê ¯Ö¸üßõÖÖ Ûêú ×»ÖµÖê

†
µÖÖêÝµÖ 'ÖÖê×ÂÖŸÖ ×ÛúµÖê •ÖÖ ÃÖÛúŸÖê Æïü …



9.
†Ö¯ÖÛúÖê ¯Ö¸üßõÖÖ ÃÖ´ÖÖ¯ŸÖ ÆüÖê®Öê ¯Ö¸ü ´Öæ»Ö OMR ¯Ö¡ÖÛú ×®Ö¸üßõÖÛú ´ÖÆüÖê¤üµÖ ÛúÖê »ÖÖî™üÖ®ÖÖ †Ö¾Ö¿µÖÛú Æîü †Öî¸ü ¯Ö¸üßõÖÖ ÃÖ´ÖÖׯŸÖ Ûêú ²ÖÖ¤ü ˆÃÖê †¯Ö®Öê ÃÖÖ£Ö ¯Ö¸üßõÖÖ ³Ö¾Ö®Ö ÃÖê ²ÖÖÆü¸ü »ÖêÛú¸ü •ÖÖµÖë … ÆüÖ»ÖÖÓ×Ûú †Ö¯Ö ¯Ö¸üßõÖÖ ÃÖ´ÖÖׯŸÖ ¯Ö¸ü ´Öæ»Ö ¯ÖÏ¿®Ö-¯Öã×ßÖÛúÖŸÖ£ÖÖ OMR ¯Ö¡ÖÛú Ûúß ›ãü¯»ÖßÛêú™ü ¯ÖÏ×ŸÖ †¯Ö®Öê ÃÖÖ£Ö »Öê •ÖÖ ÃÖÛúŸÖê Æïü …

10.
Ûêú¾Ö»Ö C.B.S.E. «üÖ¸üÖ ¯ÖϤüÖ®Ö ×ÛúµÖê ÝÖµÖê ÛúÖ»Öê ²ÖÖ»Ö ¯¾ÖÖ‡Õ™ü ¯Öê®Ö ÛúÖ Æüß ‡ÃŸÖê´ÖÖ»Ö Ûú¸ëü …

11.
×ÛúÃÖß ³Öß ¯ÖÏÛúÖ¸ü ÛúÖ ÃÖÓÝÖÞÖÛú (Ûîú»ÖÛãú»Öê™ü¸ü) µÖÖ »ÖÖÝÖ ™êü²Ö»Ö †Öפü ÛúÖ ¯ÖϵÖÖêÝÖ ¾ÖÙ•ÖŸÖ Æîü …

12.
ÝÖ»ÖŸÖ ˆ¢Ö¸üÖë Ûêú ×»Ö‹ ÛúÖê‡Ô ®ÖÛúÖ¸üÖŸ´ÖÛú †ÓÛú ®ÖÆüà Æïü …



ELECTRONIC SCIENCE
Paper II

Note This paper contains fifty objective type questions of two marks each. All questions are compulsory.
1. In a circuit shown below the base current is


2.55 µA 5.4 µA


2.66 µA 3.6 µA


2. The threshold voltage of CMOS inverter (Vth Vin Vout) can be expressed as 1
Vton

1 (VDD Vtop) Vton

(VDD Vton)kRkR(1)

11 1 -kR
kR

1 (VDD Vton) Vtop

1 (VDD Vtop)
Vtop
kRkR(3)




11 1 (Vton)kRkR

The steady state error is given as


lim lim

s . 01 SG(S)s . 0 1


lim lim

s . 01 G(S) s . 0 1
Paper-II 2
4. A conducting line on an IC chip is 2.8 mm long and has a rectangular cross-section 1 × 4 micrometer. A current of 5 mA produces a voltage drop of 100 mV across the line. If the electron mobility is 500 cm2/V.s., the electron concentration is

4.38 × 1021 cm-3 4.38 × 1027 cm-3


3.98 × 1021 cm-3 4.29 × 1027 cm-3


5. In emitter bias configuration, the stability factor S(ICO) is defined as
RB RB
1 1
RE RE
(ß
RB RB
1)
RE RE
1 RRBE

RB RE
(ß
RE RB
6. The following state diagram belongs to


J K flip flop R S flip flop


T flip flop D flip flop


7. 8086 is interfaced to two 8259s (programmable interval timer). If 8259s are in master slave configuration, the number of interrupts available to the 8086 microprocessor is

8 16


32 64


8. A function q that accepts a pointer to a character as argument and returns a pointer to an array of integer, can be declared as

int q (char int q (char


int (char None of the above


9. TRAPATT is used as

amplifier in radars


local oscillator in radars


switch in communication systems


low frequency oscillator


10. Tunnel diode is used as

High speed switch Clipper


Low gain amplifier Low frequency oscillator


11. The fourier series of the following figure is

81 1

p2 ...sin 9 sin (3p 25 sin (5p .......

81 1


p2 ...sin 9 cos (3p +25 sin (5p .......

81 1


p2 ...cos 9 cos (3p +25 cos (5p .......

81 1


p2 ...cos 9 sin (3p 25 cos (5p .......


12. Which of the following cannot be the Fourier series expansion of a periodic signal

2 cos t 3 cos 3t 2 cos pt 7 cos t


cos t 0.5 2 cos 1.5 pt sin 3.5 pt


13. The main advantage of TDM over FDM is that it

needs less power needs less bandwidth


needs simple circuitry gives better signal noise ratio TDM stands for Time Division Multiplexing FDM stands for Frequency Division Multiplexing


14. Consider the RC circuit shown in the following figure

The differential equation of the system will be 15. The state-space model of a system is given as
dei(t) dt RC deo(t) dt dei(t) dt 1 RC deo(t) dt
1 RC dei(t) dt 1 RC deo(t) dt dei(t) dt RC deo(t) dt
Paper-II 4 J-88-16

x1 x2
1

10

...

...

...

...

x1
...

...






11

x2
1

...

...

1

.
...
16. If is the length, is the width and is the thickness of a semiconductor layer to form a resistor, the sheet resistance is defined as
...

where is a unit step input occurring at t 0 and
0

The time response of the system is
2et 1 2et 1
...

...

...

...





2t e-t2t et
2e-t 1 e-t 1
...

...

...

...





2t e-t2 et

.

t

.L

tA
R RW



tL
Out of the above which one is correct



and are correct. and are correct.


and are correct. and are correct.


17. The typical dB magnitude versus characteristics of the compensators is given below



is log compensator and is lead compensator


is lead compensator and is log compensator


is lead compensator and is log compensator


is log compensator and is log-lead compensator Which of the above are correct


and and


and and


18. In reverse bias abrupt p-n junction the depletion region thickness is

2.si
q
...

NA ND
NA ND
...


o
2.si
q
...

NA ND
NA ND
...


o


2.si
NA ND
2.si
NA ND
NA ND
Out of these which is correct answer


is correct and is wrong is correct and is wrong


and are correct is correct and is wrong


19. For the counter to count upwards starting from 0000 to 1111, following statement are
given



LOAD input is high LOADinput is high


CLEAR is high Enable input is low
Out of the above, the following is the correct answer



and and


and and


20. Assume that the 8255 gets selected whenever A15 A11 are high during I/O read or write
... cycles. The A2 and A1 are connected to A1 and A0 of 8255 chip, then the address for
port C of 8255 is

FEh 03h


FF03h FFh


Codes

and are correct and are correct


and are correct and are correct


21. A function xyz is defined as Void xyz (int a int int c
cout a b

Which of the following calls are illegal
(Assume g are declared as integers)


xyz( xyz


xyz xyz


Codes

and are correct and are correct


and are correct and are correct


...

...

...


o
V

NA NDq q
22. For transmission lines, following statements are given

For open circuited transmission line VSWR is 8.


For short circuited transmission line VSWR is 0.


For short circuited transmission line VSWR is 8.


The cut off frequency for TEM wave is 0 Hz.
Out of the above statements, following is correct









and


and


23. Which of the following statements are correct

PAM can be detected by a bandpass filter.


Flat-top sampling leads to an aperture effect.


Noise can be reduced by increasing sampling rate.


Pulse code modulation is form of digital modulation.


Codes

and are correct


and are correct


and are correct


and are correct


24. A SCR may be turned OFF by

Interrupting its anode current.


Reversing polarity of its anode cathode voltage.


Low current drop out


When the gate return to 0 V after the trigger pulse is removed.


Codes

and are correct


and are correct


and are correct


and are correct


25. Consider the following statements regarding Fourier transform

The Fourier transform of an impulse function is a constant function.


The Fourier transform of an impulse function is a sine function


The Fourier transform of a constant function is an impulse function.


The Fourier transform of a constant function is a signum function. Which of the above statements are correct


and and


and and


26. Match the following lists
List I List II
a. MOSFET . Vgs.2
i. .1 .
Idss . V
p .
b. JFET W
ii. K L (V Vth)Vds
gs
c. PN Junction diode qV
iii. Io ...e 1...
kT
d. BJT IC
iv. ß IB
Codes
a b c d
i iii iv
iii ii iv
(3)iii ii iv i
ii iv iii
27. Match the following lists List I List II
a.
Electro-encephalogram i. Electrical activity of brain

b.
Electro-myogram ii. Eye movements

c.
Electrogastogram iii. Electrical activity of skeletal muscles

d.
Electro-oculogram iv. Muscle activity in the gastro intestinal


Codes
a b c d
iii iv i
(2)iii iv i ii
i ii iii
iii iv ii
28. Match the following lists List I List II
a.
Si-band gap i. 3.3 eV

b.
Ge-band gap ii 1.12 eV

c.
Ga As band gap iii. 0.7 eV

d.
Si C band gap iv. 1.43 eV


Codes
a b c d
iii iv i
ii iv iii
i iii iv
ii iii i
29. Match the following lists
List I List II
a.
IC 74198 i. Quad D flip flop

b.
IC 74175 ii J K master slave flip flop

c.
IC 74104 iii. 8 bit shift register

d.
IC 74132 iv. Quad Schmitt trigger


Codes
a b c d
ii iii iv
i iii iv
ii i iii
(4)iii i ii iv
30. Match the following in context of 8086 List I List II
a.
MOV AL, [5923 i. Register relative addressing

b.
MOV AL, ii. Memory operand addressing mode

c.
MOV DL, OAh iii. Relative base index addressing

d.
MOV AL, F5h iv. Register indirect addressing


Codes
a b c d
i iv iii
ii iv iii
(3)iii i ii iv
iv i iii
31. Match the following lists List I List II
a.
Array i. Heterogeneous

b.
Union ii. Homogeneous

c.
Volatile iii. Structure

d.
Bit-field iv. Qualifier


Codes
a b c d
iii i iv
i iv iii
iii ii iv
ii iii iv
32. Match the following lists List I List II
a.
VSWR i. 1

b.
Reflection coefficient



j . L)ii.
j .
c.
Propagation coefficient iii.


j . j .

d.
Characteristic impedance iv. 1

Codes
a b c d
iv ii iii
i iii ii
(3)iii i ii iv
iii iv ii
33. Match the following lists
List I List II
(Frequency Range) (Typical Application)

a.
300 kHz 3 MHz i. FM Broadcasting, TV

b.
430 THz 750 THz ii. Satellite communication

c.
30 GHz 300 GHz iii. AM Broadcasting

d.
30 MHz 300 MHz iv. Optical communication


Codes
a b c d
(1)iii iv i ii
(2)iii iv ii i
iii i ii
iii ii i
34. Match the following lists List I List II
a.
Photodiode i. Prevent high voltages from affecting the system receiving the signal.

b.
LASER ii. Power consumption is negative

c.
Solar cell iii. Exhibits increase in reverse current with light intensity

d.
Opto-coupler iv. Degenerate semi-conductors


Codes
a b c d
iii i ii
iv ii iii
iv iii ii
(4)iii iv ii i
35. Match the following lists
List I List II


Codes
a b c d
ii i iv iii
i iv iii ii
ii i iii iv
i iii iv ii

Directions Question No. 36 to 45 The following items consist of two statements, one labelled as "Assertion and the other labelled as the "Reason You are to examine the two statements carefully and decide if the Assertion and the Reason are individually true and if so whether the reason is a correct explanation of the assertion. Select your answer to these items using the codes given below and mark your answer accordingly.
Codes

Both and are true and is the correct explanation of


Both and are true, but is not the correct explanation of


is true, but is false.


is false, but is true.


36. Assertion MOSFET can be used to drive high current and high voltage networks without drawing current or power from the driving circuits.
Reason The high input impedances of FET essentially isolates the two parts of the network without the need of optical or electromagnetic linkages.
37. Assertion Reason Duality is a property of circuit equations. Two circuits are said to be dual when the mesh equations that describe the behaviour of one circuit are found to be identical in the form of nodal equations that describe the other.
38. Assertion Clippers are networks that employ diodes to clip away a portion of an input signal without distorting the remaining part of the applied waveforms.
Reason In clipper circuit, the orientation of diode is very important and it decide the portion of the wave to be clipped. Clippers may be series or parallel type, depending upon the series/parallel connection of diode with the load.
39. Assertion Reason In a conservative field the work done in moving from one point to another is independent of the path. In a conservative field, there is a mechanism for dissipating energy corresponding to positive work done and a source from which energy could be absorbed, if the work were negative.
40. Assertion For DAA instruction in 8086 µP, if four LSBs of register AL are greater than 9 or AC 1 then 6 is added to the four LSBs of register AL.
Reason Because AL contains binary sum which needs to be converted into BCD sum.
Paper-II 12 J-88-16

41.
Assertion In language, if is name of an array and operator is used to increment the value of then compiler will flag an error.

Reason is type pointer.

42.
Assertion Noise margin may be defined as the allowable level of additive noise for proper implementation of logic value at 0 and 1 without any possibility of misinterpretation.


Reason Noise Margin It may be defined as for high level
NMH V1H, min VOH, min
Further for low level, it is defined as
NML VIL, max VOL, max
43.
Assertion Baseband designates the band of frequencies representing the signal supplied by the source of information.

Reason The frequency of baseband signal is equal to the carrier wave signal frequency.

44.
Assertion In Lasers, the photons emitted has the same energy as the incident photon and are in phase with it.

Reason The amplitudes of individual photons add to produce a brighter light.

45.
Assertion If the characteristic equation contains any root on the imaginary axis, then the output response will have sustained oscillations.


Reason The poles or the roots of the characteristic equation should not lie in the right half of s-plane for system stability.
Read the passage and answer the following questions numbering from 46 50
The physics of semiconductor devices is dependent on the physics of semiconductors itself. The most important semiconductors are Germanium, Silicon and Gallium Arsenide. The GaAs has different properties than Silicon or Germanium. Pure silicon is intrinsic and contains negligibly small amount of impurities. Each silicon atom shares its four valance electrons with the four neighbouring atoms forming covalent bonds. An extrinsic silicon is achieved by introducing the impurities. The band structure of a solid can be obtained by solving a Schrodinger equation of an approximate one electron problem.
46. The law of mass action in semiconductor is

n p ni2 n · p ni2


n · p ni n2 p n


2
i
...
47. The Fermi-Dirac distribution function is
...
1 E EF
E EF


...

1 exp kT
1



...

1 exp kT
.E



1 exp
...

E EF kT
... ...
.E

...

E EF


1 exp kT 48. The Fermi level for the extrinsic semiconductor lies

close to the middle of the bandgap


below the conduction band


above the conduction band


above the valance band


49. The number of ionised donors are given by
1

.. ..

.. ..

D ND
D ND
D ND ND D

1

ED EF
kT
...

...

1
1 exp
g
1

.. ..

.. ..

1

ED EF ED EF
...
...

1
1 exp kTg
...

...

...
...
1

1

exp kTgEF ED
kT
...

...

...
...
1

1

expg
50. In intrinsic semi-conductor the number of occupied conduction band levels are
E
C




dE
0 E
top




dE
E
C
E
C




dE
E
V
E
V




dE
E
C
Space For Rough Work