PAPER-II ELECTRONIC SCIENCE Signature and Name of Invigilator
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Number of Pages in this Booklet 8 Number of Questions in this Booklet 50 Instructions for the Candidates
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ELECTRONIC SCIENCE
Paper II

Note This paper contains fifty objective type questions, each question carrying two
1.

2.

3.

4.

5.

6.

7.


marks. Attempt all the questions.
Which one of the following is a transferred electron device









The
BARITT diode IMPATT diode Gunn diode Step recovery diode
frequency of oscillation in
Hartley oscillator is determined by

L only


C only


L and C only


Transistor gain

Calculate the voltage drop across a 560 O resistance when the current flowing in it is 20 mA


2 V 3 V


1.120 V 1 mA

For 0 logic in TTL, the input voltage profile is


0 to 0.8 V 0 to 0.4 V


0 V 0 to 2 V

An interrupt, in which the external device supplies its address as well as the interrupt request, is known as


vectored interrupt


maskable interrupt


polled interrupt


non-maskable interrupt

Which is not a storage class in C


Automatic


Static


Maxwell's contribution law is given by
.
. · D .
.
. ..D
. × H J
.t
.
. .B
. × E
.t .
. · B 0
Register
Dynamic
to ampere's

8. In a low level amplification modulation system, amplifiers, following the modulated stage must be

Linear devices


Harmonic devices


Class C amplifiers


Non-linear devices



9. The diameter of the core of single mode optical fiber is of the order of

50 µm 250 µm


10 µm 100 µm



10. The intrinsic stand-off ratio for a UJT is equal to

1 1


1 10



11. When the force is applied on a crystal the potential changes. This is called

Piezo electric transducer


Seeback effect


Capacitive effect


Inductive effect



12. The transfer function of the system show in the given figure is

O ABC



R1 ABC O A C




R1 AB+ AC O AB +AC




RABC O AB +AC





R1 AB+ AC

13. Ring counter is a

Sequence generator


Up counter


Down counter


Decade counter



14. The refractive index of the ionosphere for radio wave is

1 1


0 1



15. The memory addressing mode that takes the least time is

direct addressing


register addressing


immediate addressing


implicit



16. Gunn diode oscillators are used in microwave applications
1.
Low power oscillators

2.
Medium power oscillators

3.
Pump sources

4.
Having higher noise
Of these statements




3 are correct


4 are correct


1 are correct


3 are correct



17. Consider the following statements Laser is an acronym for light amplification by stimulated emission of radiation in comparison to LED, it has
1.
higher emission efficiency.

2.
narrow spectral width.

3.
coherent.

4.
spontaneous emission.



3 are correct


4 are correct


4 are correct


4 are correct



18. The Hall effect experiment provides
1.
Hall co-efficient.

2.
Type of the charge carrier.

3.
Mobility of the charge carrier.

4.
Temperature of the material


increases.
Of these statements,


4 are correct


4 are correct


3 are correct


3 are correct



19. Op-Amp has the following characteristics
1.
Zero off-set voltage

2.
High CMRR

3.
High input impedance

4.
Zero slew rate
Of these statements




3 are correct


4 are correct


4 are correct


1 are correct



20. Yagi-Uda Antenna is used as a
1.
HF transmitting antenna.

2.
VHF television receiving antenna.

3.
it is having high gain in narrow band.

4.
it is called as supergain antenna. Of these statements



3 are correct


4 are correct


1 are correct


4 are correct


Question Nos. 21 to 30 are Assertion and Reason type. Select your answers to these items using the codes given below and mark your answer sheet accordingly.


Codes

Both and are true and

is the correct explanation of


Both and are true but

is not correct explanation of


is true but is false.


is false but is true.



21. Assertion At room temperature, the fermi level in a p-type semiconductor lies nearer to the valence band whereas that in n-type semiconductor lies nearer to the conduction band.
Reason At room temperature, the p-type semiconductor has majority charge carrier are holes whereas the n-type semiconductor, the majority charge carriers are electrons.

22.
Assertion Superposition theorem is a method of network analysis that permits considering the effects of each source independently.

Reason Thevenin's theorem permits the reduction of any two terminal linear ac network to one having a single voltage source and series impedance.

23.
Assertion A monostable multivibrator can be used to alter the pulse width of a repetitive pulse train.

Reason Monostable multivibrator has a single stable state.

24.
Assertion In Intel 8085, the lower byte of address and data are multiplexed.

Reason This helps limit the number of external pin terminals.

25.
Assertion R-2R ladder type D/A converter has a higher speed of conversion than a weighted resistance D/A converter.

Reason R-2R ladder type D/A converter uses a smaller number of components than the weighted resistance D/A converter.

26.
Assertion The top down structured programming should be used for developing programmes.

Reason The top down structured programming methodology enables us to get readable and easily provable program.

27.
Assertion The port of root locus on the real axis is not dependent upon the poles and zeroes which are not on the real axis.


Reason Poles and zeros which are not on the real axis always occur in conjugate pairs.
28.
Assertion Master-Slave JK flip­flop is free from race around condition.

Reason Master-Slave uses two J-K flip-flop.


29.
Assertion A demultiplexer cannot be used as a decoder.

Reason A demultiplexer selects one of many output whereas a decoder selects an output corresponding to the coded output.


30.
Assertion A processor can reference a memory stack without specifying an address.


Reason The address is always available and automatically updated in the stack pointer.


Sequence Type

31. The following components are used to measure the output power of a 2 kW travelling wave tube amplifier (TWTA)
I. TWTA
II. Low-pass filter/high pass filter
III. 40 dB directional coupler with matched load
IV. Power meter The correct sequence of the connection of these components is

II, III, IV IV, III, II


IV, II, III II, III, IV, I



32. Each instruction in an assembly program has the following field
I. Label field
II. Mnemonic field
III. Operand field
IV. Comment field The correct sequence order of these field is

III, II, IV II, III, IV


III, II, IV II, III, IV



33. Consider the following logic families
I. MOS II. DTL
III. RTL IV. ECL The sequence of the logic families in the order of their increasing noise immunity is

III, IV, II III, IV, II, I


IV, III, II IV, III, II, I



34. Write down the following frequencies in increasing order
I. K band II. X band
u
III. S band IV. UHF band

III, II, IV IV, III, II, I


II, III, IV II, III, IV, I



35. Consider the following devices
I. BJT in CB mode
II. BJT in CE mode
III. JFET
IV. MOSFET The correct sequence of these devices in increasing order of their input impedance is

II, III, IV II, III, IV


II, IV, III III, II, IV



36. Match List I with List II and select the correct answer using the codes given below the lists

List I List II
Wave no .B

.t

. .
.× E ..D
J

.t
.· B 0
.

2p
.× H
K

p

Codes















37. List I List II

Frequency Envelope modulation detection


Double Companding sideband suppressed signal carrier


PCM Balanced modulator


Amplitude Pre-emphasis modulation and de-emphasis


Codes















38. List I List II

BJT Voltage controlled negative resistance


MOSFET High current gain


Tunnel Voltage diode regulation


Zener diode High input impedance


Codes















39. List I List II

IC 8251 Minimum /maximum mode


IC 8086 Programmable peripheral interface


IC 8255 A Micro controller


IC 8259 A Programmable interrupt controller


Codes















40. List I

LVDT


Bourdon gauge


Strain gauge


Thermistor


Codes















41. List I Flags

Sign


Auxiliary carry


Parity


Carry flag


Codes















42. List I

LASER


Solar cell


Photo diode


LED



Codes















List II

Pressure


Temperature


Displacement

Stress

















List II
Bit-position


5th Bit


8th Bit


1st Bit
3rd Bit








(iii)


List II

Spontaneous emission


Power delivers to load


Optical
detector


Stimulated
emission







(iii)



43. List I List II

Crystal Uses LC oscillator circuit


UJT Uses crystal instead of LC


RC phase shift Relaxation oscillator oscillator


Tank circuit 180° phase shift


Codes















44. List I List II A/D converters Characteristics

Parallel Null

comparator balancing type


Successive Fastest approximation converter


Dual slope Voltage dependent conversion time


Counter-ramp Integrating type


Codes















45. List I List II


ASCII


Microprocessor Mnemonics


Assembly Op code language


Object oriented 7-bit code programming



Codes














Read the passage below and answer the questions (46 50) that follow based on your understanding of the passage.
The Reflex-Klystron is a low power, low efficiency oscillator. Reflex-Klystron with integral cavities are available for frequencies ranging from under 4GHz to over 200 GHz. A typical power output is 100 mW, but overall maximum powers range from 3 W in the X band to 10 mW at 220 GHz. Typical efficiencies are under 10 percent, restricting the oscillator to low-power applications. It has been seen that in Reflex-Klystron, velocity modulation is converted to current modulation in the repeller space and one bunch is formed per cycle of oscillations. For oscillations to be maintained, the transit time in the repeller space must have the correct value. It is also interesting to note that ideally no energy goes into velocity-modulating the electron beam. In Reflex Klystron the practical transit times corresponding to the range from 1 3/4 to 6 3/4 cycles of gap voltage.
The Klystron oscillator has been replaced by various semiconductor oscillators such as signal source. In microwave generators, local oscillators in microwave receivers are frequency-modulated oscillator in portable microwave links and pump oscillator for parametric amplifiers.
Additionally, the Reflex Klystron is still a very useful millimeter and sub millimeter oscillator producing more power at the highest frequencies then most semiconductor devices, with very low AM and FM noise.
46. Indicate the false statement. Klystron amplifiers may use intermediate cavities to
prevent the oscillations that
occur in two-cavity Klystrons.
increase the bandwidth of the
device.
improve the power gain.
increase the efficiency of the
Klystron.


47. The transit time in the repeller space 3
of a reflex Klystron must be n
4 cycles to ensure that

electrons are accelerated by the gap voltage on their return.


returning electrons give energy to the gap oscillations.


it is equal to the period of the cavity oscillations.


the repeller is not damaged by striking electrons.



48. Indicate the false statement. Transit time in microwave tubes will be reduced if

the electrodes are brought closer together.


a higher anode current is used.


multiple or coaxial leads are used.


the anode voltage is made larger.



49. X-band frequencies falls in the range of

10 GHz to 15 GHz


11 GHz to 15 GHz


8 GHz to 12 GHz


7 GHz to 11 GHz



50. The Klystron oscillator is superior to other semiconductor oscillators. Indicate the false statement.

signal source in microwave generator.


local oscillator in microwave receivers.


pump oscillator for parametric amplifier.


amplitude-modulated oscillator in portable microwave links.



Space For Rough Work