Exam Details
Subject | crystal growth | |
Paper | ||
Exam / Course | m.sc. in physics | |
Department | ||
Organization | alagappa university | |
Position | ||
Exam Date | April, 2017 | |
City, State | tamil nadu, karaikudi |
Question Paper
M.Sc. DEGREE EXAMINATION, APRIL 2017
Fourth Semester
Physics
CRYSTAL GROWTH
(2013 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 x 2 20)
Answer all questions.
1. What are the advantages of single-crystalline copper over
poly-crystalline copper?
2. Sketch the lattice planes 2 and 1 2].
3. What are the merits and demerits of solution growth
methods?
4. List the factors affecting the crystal growth by gel
technique.
5. What is the need for a seed crystal in crystal growth?
6. What is the principle of flux growth?
7. What are the different types of fluxes used in flux growth
method?
8. What are the advantages of X-ray method over the optical
method of crystal orientation.
Sub. Code
521510
RW-181
2
ws2
9. What are the uses of etching studies?
10. Define micro-hardness of a crystal.
Part B x 5 25)
Answer all questions choosing either or
11. Derive an expression for the inter-planar distance of
a k plane of a cubic crystal.
Or
Discuss the occurrence and properties of different
types of dislocations in crystals.
12. Explain the use of Mier's solubility diagram in
crystal growth.
Or
Explain the properties of silica gel used in gel
growth method.
13. Explain the zone refining procedure of crystal
purification.
Or
Briefly discuss the hydrothermal method of crystal
growth.
14. Discuss the role of heat convection in melt growth
process.
Or
Explain the optical method of crystal orientation.
List its merits and demerits.
RW-181
3
ws2
15. Explain the procedure of optical microscopic study
of defects in crystals.
Or
Discuss the experimental procedure to study the
optical absorption by a crystal.
Part C x 10 30)
Answer any three questions.
16. Discuss the theory of diffusion growth of crystals and
obtain an expression for its growth rate.
17. Explain the temperature gradient method of crystal
growth and mention its merits and demerits.
18. Explain the principle and procedure of the LEC method of
crystal growth and mention its advantage over
Czochralski method.
19. Discuss in brief about the method of chemical vapour
deposition and its uses. Discuss in brief the essential
steps involved in crystal polishing procedure.
20. Explain the experimental methods used to study the
different thermal properties of crystals.
———————
Fourth Semester
Physics
CRYSTAL GROWTH
(2013 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 x 2 20)
Answer all questions.
1. What are the advantages of single-crystalline copper over
poly-crystalline copper?
2. Sketch the lattice planes 2 and 1 2].
3. What are the merits and demerits of solution growth
methods?
4. List the factors affecting the crystal growth by gel
technique.
5. What is the need for a seed crystal in crystal growth?
6. What is the principle of flux growth?
7. What are the different types of fluxes used in flux growth
method?
8. What are the advantages of X-ray method over the optical
method of crystal orientation.
Sub. Code
521510
RW-181
2
ws2
9. What are the uses of etching studies?
10. Define micro-hardness of a crystal.
Part B x 5 25)
Answer all questions choosing either or
11. Derive an expression for the inter-planar distance of
a k plane of a cubic crystal.
Or
Discuss the occurrence and properties of different
types of dislocations in crystals.
12. Explain the use of Mier's solubility diagram in
crystal growth.
Or
Explain the properties of silica gel used in gel
growth method.
13. Explain the zone refining procedure of crystal
purification.
Or
Briefly discuss the hydrothermal method of crystal
growth.
14. Discuss the role of heat convection in melt growth
process.
Or
Explain the optical method of crystal orientation.
List its merits and demerits.
RW-181
3
ws2
15. Explain the procedure of optical microscopic study
of defects in crystals.
Or
Discuss the experimental procedure to study the
optical absorption by a crystal.
Part C x 10 30)
Answer any three questions.
16. Discuss the theory of diffusion growth of crystals and
obtain an expression for its growth rate.
17. Explain the temperature gradient method of crystal
growth and mention its merits and demerits.
18. Explain the principle and procedure of the LEC method of
crystal growth and mention its advantage over
Czochralski method.
19. Discuss in brief about the method of chemical vapour
deposition and its uses. Discuss in brief the essential
steps involved in crystal polishing procedure.
20. Explain the experimental methods used to study the
different thermal properties of crystals.
———————
Other Question Papers
Subjects
- advanced electronics
- atomic and molecular physics
- basic concepts of instrumentation
- basics in environmental science
- classical dynamics and relativity
- classical mechanics
- condensed matter physics
- crystal growth
- elective – crystal growth and thin films
- elective – energy physics and environmental science
- elective – medical physics
- elective – numerical methods
- elective — communication electronics
- elective — microprocessors and micro controllers
- elective — modern optics and laser physics
- elective — nano science
- electromagnetic theory
- elementary numerical analysis
- linear and integrated electronics
- materials science
- mathematical physics — i
- microprocessor and electronic instrumentation
- molecular spectroscopy
- nuclear and particle physics
- quantum mechanics
- quantum mechanics — ii
- solid state physics
- thermodynamics and statistical mechanics
- thermodynamicsandstatisticalphysics