Exam Details
| Subject | Nano - Electronics | |
| Paper | ||
| Exam / Course | Diploma In Electronics And Communication Engineering (DECVI)/ Advanced Level Certificate Course In Electronics And Communication Engineering (ACEVI)/ | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | June, 2016 | |
| City, State | new delhi, |
Question Paper
No. of Printed Pages: 4 IBIELE-0071
B.Tech. -VIEP -ELECTRONICS AND
COMMUNiCATION ENGINEERING (BTECVI)
Term-End Examination 00706
June, 2016
BIELE-007 NANO-ELECTRONICS
Time: 3 hours Maximum Marks: 70
Note: Attempt any seven questions. All questions carry equal marks. Use of scientific calculator is allowed. Missing data, if any, may be suitably assumed.
1. What are the challenges of nano scale MOSFETs in sub-100 nm dimensions?
What is a technology node? How is it defined?
What is beyond CMOS?
What are the interconnect issues in VLSI circuits? 4x2 1/2 =10
2. How does oxide layer thickness play an important role in MOSFET operation? 3
What do you mean by non-uniform dopant concentration in MOSFET technology 3
What is lithography and what is its role in IC fabrication technology? Explain with a suitable diagram. 4
3. Explain the operation principle of MOSFET using an energy-band diagram in all modes of operation. 5
Derive the expression for threshold voltage of MOSFETs. 5
4. What is technology scaling How do the dimensions of MOSFETs scale down under constant field scaling? 3
What is oxide breakdown How does it happen? 3
What is velocity saturation Explain with a suitable diagram. 4
5. Explain the Silicon-On-Insulator technology. How is it different from bulk MOSFET technology? 5
Explain the operation principle of FinFET with its characteristics graph. 5
6. What do you mean by quantum well, quantum wire and quantum dots? Explain each with its operation principle. 5
Explain the operation principle of a single electron device. Differentiate between charge quantization and energy quantization. 5
7. What is the difference between Homojunction and Heterojunction based devices? Explain with suitable examples. 5
Explain the different types of heterojunction based devices with their energy band diagrams. 5
8. What are the unit processes of Nano-electronics device fabrication? Show the fabrication flow of basic NMOS device. 5
What are the differences between Coulomb blockade and Coulomb staircase? 5
9. Explain the operation principle of a CNFET by using suitable characteristics graphs. What is its use in electronic circuits? 5
Which semiconductor materials are very useful for spin controlled device operation? How is spin: useful for the operation of SpinFETs? 5
10. Write short notes on any two of the following: 2x5=10
Heterojunction FET (HFET)
Silicon-On-Nothing
Strained Silicon
B.Tech. -VIEP -ELECTRONICS AND
COMMUNiCATION ENGINEERING (BTECVI)
Term-End Examination 00706
June, 2016
BIELE-007 NANO-ELECTRONICS
Time: 3 hours Maximum Marks: 70
Note: Attempt any seven questions. All questions carry equal marks. Use of scientific calculator is allowed. Missing data, if any, may be suitably assumed.
1. What are the challenges of nano scale MOSFETs in sub-100 nm dimensions?
What is a technology node? How is it defined?
What is beyond CMOS?
What are the interconnect issues in VLSI circuits? 4x2 1/2 =10
2. How does oxide layer thickness play an important role in MOSFET operation? 3
What do you mean by non-uniform dopant concentration in MOSFET technology 3
What is lithography and what is its role in IC fabrication technology? Explain with a suitable diagram. 4
3. Explain the operation principle of MOSFET using an energy-band diagram in all modes of operation. 5
Derive the expression for threshold voltage of MOSFETs. 5
4. What is technology scaling How do the dimensions of MOSFETs scale down under constant field scaling? 3
What is oxide breakdown How does it happen? 3
What is velocity saturation Explain with a suitable diagram. 4
5. Explain the Silicon-On-Insulator technology. How is it different from bulk MOSFET technology? 5
Explain the operation principle of FinFET with its characteristics graph. 5
6. What do you mean by quantum well, quantum wire and quantum dots? Explain each with its operation principle. 5
Explain the operation principle of a single electron device. Differentiate between charge quantization and energy quantization. 5
7. What is the difference between Homojunction and Heterojunction based devices? Explain with suitable examples. 5
Explain the different types of heterojunction based devices with their energy band diagrams. 5
8. What are the unit processes of Nano-electronics device fabrication? Show the fabrication flow of basic NMOS device. 5
What are the differences between Coulomb blockade and Coulomb staircase? 5
9. Explain the operation principle of a CNFET by using suitable characteristics graphs. What is its use in electronic circuits? 5
Which semiconductor materials are very useful for spin controlled device operation? How is spin: useful for the operation of SpinFETs? 5
10. Write short notes on any two of the following: 2x5=10
Heterojunction FET (HFET)
Silicon-On-Nothing
Strained Silicon
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